Researchers at INST Discover Innovative Materials for Future Electronic Devices

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Researchers at INST Discover Innovative Materials for Future Electronic Devices

New Delhi, Dec 4 (NationPress) Researchers from the Institute of Nano Science and Technology (INST), located in Mohali, an autonomous institute affiliated with the Department of Science and Technology, have discovered the capabilities of Janus Sb2XSX monolayers as highly promising materials for the advancement of next-generation electronic devices.

In response to the increasing need for energy-efficient materials with superior electronic characteristics, the research team examined the structural, piezoelectric, electronic, and spintronic attributes of the Janus Sb2XSX monolayers.

The findings indicated that these monolayers could provide viable solutions to the urgent requirements of energy-efficient electronics, flexible devices, and sensors.

According to the Ministry of Science and Technology, “The Janus structure (a material or system possessing two distinct sides with contrasting properties) of two-dimensional (2D) materials has emerged as a major focus in recent research, particularly following the successful synthesis of the Janus MoSSe (a two-dimensional (2D) material derived from molybdenum disulfide—MoS2), monolayer.”

This structure is characterized by vertical asymmetry, facilitating the adjustment of intrinsic electric fields and the induction of piezoelectric properties.

The ministry further added, “The convergence of recent advancements in material synthesis, the distinct properties of non-centrosymmetric structures, and the demand for innovative applications in spintronics has driven the investigation into Janus Sb2XSX monolayers.”

The recent study, published in the Journal of Applied Physics, demonstrated that monolayers containing quintuple atomic layers form a stable, free-standing 2D crystal that exhibits structural, dynamical, thermal, and mechanical stability, along with piezoelectric properties.

The unique vertical asymmetry of the Janus structure also leads to intriguing electronic attributes, including phenomena known as Rashba spin-splitting and spin Hall effects. This indicates the potential of these materials for next-generation spintronic devices.

During the investigation, the team integrated advanced materials science with computational physics to delve into the unique characteristics of Janus Sb2XSX monolayers. This research, they noted, will lay the groundwork for future technologies in spintronics and multifunctional electronic devices.