IIT Delhi Scientists Create Innovative Photodetector to Enhance High-Speed Optical Communication

Synopsis
Key Takeaways
- New advanced photodetector developed by IIT Delhi.
- Functions without external power supply.
- Utilizes photo-induced displacement current for efficiency.
- Achieved a cutoff frequency of 5.6 MHz.
- Potential applications in quantum technology and energy-efficient systems.
New Delhi, March 10 (NationPress) The Indian Institute of Technology Delhi (IIT Delhi) announced on Monday the development of an innovative photodetector that has the potential to greatly enhance high-speed optical communication.
This cutting-edge device functions without the need for an external power supply and provides ultra-rapid response and high sensitivity.
Photodetectors are essential in optical communication as they convert light signals into electrical signals, facilitating rapid data transfer.
Past versions of photodetectors often relied on external power sources and faced issues with signal attenuation.
The newly designed metal-semiconductor-insulator-metal (MSIM) photodetector addresses these issues, resulting in improved efficiency and reliability.
In contrast to traditional silicon (Si) and gallium arsenide (GaAs) photodetectors, which require high bias voltages and have limited adaptability, the MSIM photodetector utilizes photo-induced displacement current. This advancement boosts its response time and overall efficiency.
The research team, led by Dr. Rakesh Suthar (postdoctoral researcher) and Suryakant Singh, under the mentorship of Professor Supravat Karak from the organic and hybrid electronic device laboratory at the Department of Energy Science and Engineering, has been published in the esteemed journal Advanced Functional Materials.
Some elements of this research were conducted at Nagoya University, Japan, as part of the JSPS Invitational Fellow program under Professor Kunio Awaga’s group.
“Our objective was to create a high-speed, self-sustaining photodetector that could propel the evolution of next-generation optical communication systems while promoting energy efficiency,” stated Professor Karak.
The research team employed polymer PM6, acceptor Y6, and a dielectric parylene layer to construct a device capable of producing fast transient photocurrent signals.
These signals exhibit opposite polarity during light ON/OFF cycles, making them more easily identifiable.
The device achieved an impressive cutoff frequency of 5.6 MHz, exceeding many current organic photodetectors.
Furthermore, the new photodetector has successfully undergone testing for real-time infrared (IR) communication using ASCII codes, showcasing its capacity for high-speed data transmission.
Its self-powered characteristic, coupled with high sensitivity and quick response, positions it as a promising technology for energy-efficient optoelectronic applications.
This breakthrough could also prove beneficial in quantum technology, especially for single-photon detection and high-frequency communication.
The researchers plan to undertake further evaluations under the “Quantum Mission” project, which is spearheaded by IIT Delhi and supported by the Department of Science and Technology (DST).
“This study underscores the potential of organic semiconductors in creating energy-efficient and ultra-fast optoelectronic devices, significantly improving high-speed communication and sensing technologies,” remarked Dr. Suthar.