Seoul, March 17 (NationPress) Samsung Electronics has officially launched its latest seventh-generation high bandwidth memory (HBM), called HBM4E, at an annual technology conference organized by Nvidia. During the event, the U.S. tech leader emphasized its growing alliance with the South Korean semiconductor company that extends beyond just memory solutions.

Samsung Electronics shared insights into the progress of its HBM4E products while demonstrating its expertise as a comprehensive memory solution provider for Nvidia's Vera Rubin AI platform. This unveiling occurred during Nvidia GTC 2026, which commenced in California on Monday, as reported by Yonhap news agency.

This event marked the inaugural display of the actual HBM4E chip, which is anticipated to deliver speeds of 16 gigabits per second per pin and a bandwidth of 4.0 terabytes per second.

This performance signifies an enhancement over the previous HBM4, which achieved speeds of 13 gigabits per second per pin and a bandwidth of 3.3 terabytes per second.

During his keynote address, Nvidia CEO Jensen Huang expressed his appreciation to Samsung Electronics for producing the Groq 3 language processing unit (LPU), which is set to boost Nvidia's AI platform capabilities.

"I want to thank Samsung, who manufactures the Groq 3 LPU chip for us, and they are working tirelessly. I truly appreciate your efforts," the CEO remarked, confirming that Samsung Electronics' foundry division is responsible for the chip's production.

Huang's comments indicate that the collaboration between Samsung Electronics and Nvidia has expanded to encompass the foundry sector, or chip contract manufacturing.

Earlier, Samsung Electronics initiated its first commercial shipments of sixth-generation HBM, known as HBM4, tailored for Nvidia's Vera Rubin platform, which the chipmaker claims provides the "ultimate performance" for AI operations.

Additionally, Samsung Electronics presented its hybrid copper bonding (HCB) technology, which allows for stacking over 16 layers while reducing thermal resistance by 20% compared to thermal compression bonding (TCB), showcasing its packaging advancements for next-generation HBM.

The South Korean tech giant stated, "In order for innovation in the AI industry, strong AI systems like the Vera Rubin platform are critical."

"Samsung Electronics intends to persist in supplying high-performance memory solutions that support the Vera Rubin platform," the company added.

Moreover, both companies are looking to lead a shift in the global AI infrastructure paradigm through their partnership.

At the event, Samsung Electronics set up an exhibition booth featuring three distinct zones: AI Factories, Local AI, and Physical AI, showcasing the firm's next-generation chips designed to meet the evolving demands of the AI sector.