Chinese SiC chipmakers eye data centre boom as AI strains power grids
Synopsis
Key Takeaways
Silicon carbide (SiC) semiconductors are emerging as a critical solution to the power crisis gripping global AI data centres, and Chinese chipmakers are racing to capitalise. Shenzhen-based Basic Semiconductor, founded in 2016 by graduates of Tsinghua University and the University of Cambridge, passed a listing hearing earlier this week on its path to an initial public offering (IPO) in Hong Kong, making it the latest Chinese SiC firm to seek public capital to fund expansion.
Why it matters
The global AI infrastructure buildout is placing unprecedented strain on data centre energy grids, forcing operators to rethink power delivery from the ground up. SiC chips — compound semiconductors prized for exceptional heat resistance and power efficiency — are now being evaluated not just for electric vehicles (EVs), where they have long been a staple, but as a core component in next-generation data centre power architectures.
Basic Semiconductor is one of China's few fully integrated device manufacturers in the SiC space, covering chip design, wafer fabrication, and module packaging under one roof — a vertical integration model that gives it a structural edge in supply chain control.
The competitive backdrop
Basic Semiconductor joins domestic peers Silan Microelectronics and China Resources Microelectronics in a crowded push to supply next-generation AI infrastructure. Global incumbents including Infineon Technologies and STMicroelectronics have historically dominated the SiC market, but aggressive capacity expansion by Chinese firms has already shifted the supply-demand balance.
According to research from UBS, the global SiC market is currently oversupplied, largely as a result of that rapid capacity ramp-up by Chinese manufacturers. However, analysts noted that the transition to 800V power architectures in 2027 and 2028 is expected to help absorb the excess inventory, with data centre adoption playing a meaningful supporting role.
Nvidia's 800V catalyst
Nvidia's advanced 800V Kyber rack configurations are slated for mass deployment in 2027, and UBS research projects that SiC and gallium nitride (GaN) chips will together capture 10 to 15 per cent of the power semiconductor architecture in those systems. Like SiC, GaN is a next-generation compound material capable of handling higher voltages than conventional silicon, making both technologies well-suited to the demands of high-density AI compute clusters.
The anticipated Nvidia Kyber ramp represents a concrete, time-bound demand signal that could help Chinese SiC producers work through current oversupply conditions while establishing supply relationships with hyperscale data centre operators.
What's next
Basic Semiconductor's expected Hong Kong listing underscores a deliberate national strategy to dominate the next phase of SiC technology, with public markets providing the capital runway needed to scale production ahead of the 2027 architecture transition. Investors and industry observers will be watching whether Chinese SiC producers can translate current oversupply into long-term market share gains as data centres become a structurally important demand vertical alongside EVs.